A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate

Chih Yuan Hou; Chi Ching Lin; Yew-Chuhg Wu

doi:10.1149/1.2356355

A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate

Chih Yuan Hou^*, Chi Ching Lin, Yew-Chuhg Wu

^*此作品的通信作者

材料科學與工程學系

研究成果: Conference article › 同行評審

摘要

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi ₂ precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.

原文	English
頁（從 - 到）	203-206
頁數	4
期刊	ECS Transactions
卷	3
發行號	8
DOIs	https://doi.org/10.1149/1.2356355
出版狀態	Published - 1 12月 2006
事件	Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, Mexico 持續時間: 29 10月 2006 → 3 11月 2006

存取文件

10.1149/1.2356355

其它文件與鏈接

Link to publication in Scopus

引用此

@article{f0f54b2bcae04bd98fe8d94e55f50564,

title = "A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate",

abstract = "Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.",

author = "Hou, {Chih Yuan} and Lin, {Chi Ching} and Yew-Chuhg Wu",

year = "2006",

month = dec,

day = "1",

doi = "10.1149/1.2356355",

language = "English",

volume = "3",

pages = "203--206",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "8",

note = "Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

TY - JOUR

T1 - A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate

AU - Hou, Chih Yuan

AU - Lin, Chi Ching

AU - Wu, Yew-Chuhg

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.

AB - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846987934&partnerID=8YFLogxK

U2 - 10.1149/1.2356355

DO - 10.1149/1.2356355

M3 - Conference article

AN - SCOPUS:33846987934

SN - 1938-5862

VL - 3

SP - 203

EP - 206

JO - ECS Transactions

JF - ECS Transactions

IS - 8

T2 - Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

A simple method for gettering of nickel within the NILC polycrystalline silicon film using a gettering substrate

摘要

存取文件

其它文件與鏈接

指紋

引用此