Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced. Copyright The Electrochemical Society.
|頁（從 - 到）||203-206|
|出版狀態||Published - 1 12月 2006|
|事件||Thin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, Mexico|
持續時間: 29 10月 2006 → 3 11月 2006