A simple analytical model to accurately predict self-resonance frequencies of on-silicon-chip inductors in TEM mode and eddy current mode

Jyh-Chyurn Guo*, Teng Yang Tan

*此作品的通信作者

    研究成果: Article同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    For the first time, a simple analytical model in the form of explicit formulas was derived for on-silicon-chip inductors. This analytical model can accurately calculate self-resonance frequencies (fSR) in TEM mode and eddy current mode corresponding to very high and very low substrate resistivities (ρSi). Furthermore, this derived model can predict and explain the interesting result that fSR keeps nearly a constant independent of ρSi in TEM and eddy current modes but is critically determined by the inductance and parasitic capacitances. The simple model is useful in on-silicon-chip inductor design for increasing fSR under specified inductance target for broadband RF circuit design and applications.

    原文English
    頁(從 - 到)1225-1231
    頁數7
    期刊Solid-State Electronics
    52
    發行號8
    DOIs
    出版狀態Published - 1 8月 2008

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