## 摘要

For the first time, a simple analytical model in the form of explicit formulas was derived for on-silicon-chip inductors. This analytical model can accurately calculate self-resonance frequencies (f_{SR}) in TEM mode and eddy current mode corresponding to very high and very low substrate resistivities (ρ_{Si}). Furthermore, this derived model can predict and explain the interesting result that f_{SR} keeps nearly a constant independent of ρ_{Si} in TEM and eddy current modes but is critically determined by the inductance and parasitic capacitances. The simple model is useful in on-silicon-chip inductor design for increasing f_{SR} under specified inductance target for broadband RF circuit design and applications.

原文 | English |
---|---|

頁（從 - 到） | 1225-1231 |

頁數 | 7 |

期刊 | Solid-State Electronics |

卷 | 52 |

發行號 | 8 |

DOIs | |

出版狀態 | Published - 1 8月 2008 |