TY - JOUR
T1 - A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis
T2 - A Demonstration to Analyze ΔVTHTransients in p-GaN Gate Power HEMTs
AU - Singh, Shivendra Kumar
AU - Wu, Tian Li
AU - Chauhan, Yogesh Singh
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2024/3/1
Y1 - 2024/3/1
N2 - Characterizing the trapping time constant is crucial to understanding the root cause of the instability. The conventional approach to analyzing the trap-related transient characteristics mostly utilizes the derivative method to extrapolate the trapping time constant, which may have information loss due to an unobvious trapping response. This article presents a novel Bayesian deconvolution methodology to accurately extract and capture time constants. The proposed technique is applied to determine trapping time constants and activation energies in p-GaN gate power high electron mobility transistors (HEMTs) under positive gate bias stress. The proposed method is versatile and suitable for a broad spectrum of electronic devices experiencing the trapping-related transient phenomena.
AB - Characterizing the trapping time constant is crucial to understanding the root cause of the instability. The conventional approach to analyzing the trap-related transient characteristics mostly utilizes the derivative method to extrapolate the trapping time constant, which may have information loss due to an unobvious trapping response. This article presents a novel Bayesian deconvolution methodology to accurately extract and capture time constants. The proposed technique is applied to determine trapping time constants and activation energies in p-GaN gate power high electron mobility transistors (HEMTs) under positive gate bias stress. The proposed method is versatile and suitable for a broad spectrum of electronic devices experiencing the trapping-related transient phenomena.
KW - Bayesian deconvolution
KW - p-GaN gate HEMTs
KW - threshold voltage shift
KW - time-constant extraction
UR - http://www.scopus.com/inward/record.url?scp=85184027086&partnerID=8YFLogxK
U2 - 10.1109/TED.2024.3354213
DO - 10.1109/TED.2024.3354213
M3 - Article
AN - SCOPUS:85184027086
SN - 0018-9383
VL - 71
SP - 1820
EP - 1826
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
ER -