A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics

Keyphrases

• Electrical Characteristics 100%
• Stress Effect 100%
• Shallow Trench Isolation 100%
• Mechanical Stress 100%
• Layout Dependences 100%
• Scaleable 100%
• Circuit Design 33%
• Electrical Performance 33%
• Threshold Voltage 33%
• Device Layout 33%
• Device Dimensions 33%
• Good Accuracy 33%
• Advanced CMOS 33%
• Saturation Velocity 33%
• Isolation Stress 33%
• Second-order Effects 33%
• MOS Technology 33%

Engineering

• Shallow Trench Isolation 100%
• Mechanical Stress 100%
• Circuit Design 33%
• Electrical Performance 33%
• Good Accuracy 33%

Material Science

• Electrical Property 100%
• Mechanical Stress 100%
• Electronic Circuit 50%