A scalable lossy substrate model for nanoscale RF MOSFET noise extraction and simulation adapted to various pad structures

Jyh-Chyurn Guo*, Y. H. Tsai

*此作品的通信作者

    研究成果: Conference contribution同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    A broadband and scalable lossy substrate model is developed and validated for nanoscale RF MOSFETs of different finger numbers and adopting various pad structures such as lossy, normal, and small pads. The broadband accuracy is justified by good match with S- and Y-parameters up to 40 GHz. The measured noise characteristics in terms of four noise parameters can be accurately simulated up to 18 GHz. The scalable lossy substrate model can consistently predict the abnormally strong finger number dependence and nonlinear frequency response of noise figure (NFmin) revealed by the devices with lossy pads. Furthermore, the scalable model can precisely distribute the substrate loss between the transmission line (TML) and pads of various metal topologies and the resulted excess noises. The enhanced model provides useful guideline for appropriate layout of pads and TML to effectively reduce the excess noises. The remarkably suppressed noise figure to ideally intrinsic performance can be approached by the small pad in this paper.

    原文English
    主出版物標題Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
    頁面299-302
    頁數4
    DOIs
    出版狀態Published - 2 10月 2007
    事件2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 - Honolulu, HI, United States
    持續時間: 3 6月 20075 6月 2007

    出版系列

    名字Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    ISSN(列印)1529-2517

    Conference

    Conference2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
    國家/地區United States
    城市Honolulu, HI
    期間3/06/075/06/07

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