A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

Ming Hsuan Kao; Wen Hsien Huang; Jia Min Shieh; Chang Hong Shen; Pei Kang Lee; Hsing Hsiang Wang; Chih Chao Yang; Tung Ying Hsieh; Peichen Yu

doi:10.1063/1.4992141

A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

Ming Hsuan Kao
, Wen Hsien Huang
, Jia Min Shieh
, Chang Hong Shen
, Pei Kang Lee
, Hsing Hsiang Wang
, Chih Chao Yang
, Tung Ying Hsieh
, Peichen Yu

光電工程學系

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

A sandwiched buffer layer of SiO₂/Al/SiO₂ enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO₂ interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 10⁶ and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.

原文	English
文章編號	024101
期刊	Applied Physics Letters
卷	111
發行號	2
DOIs	https://doi.org/10.1063/1.4992141
出版狀態	Published - 10 7月 2017

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10.1063/1.4992141

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title = "A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide",

abstract = "A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 106 and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.",

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AU - Kao, Ming Hsuan

AU - Huang, Wen Hsien

AU - Shieh, Jia Min

AU - Shen, Chang Hong

AU - Lee, Pei Kang

AU - Wang, Hsing Hsiang

AU - Yang, Chih Chao

AU - Hsieh, Tung Ying

AU - Yu, Peichen

PY - 2017/7/10

Y1 - 2017/7/10

N2 - A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 106 and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.

AB - A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 106 and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.

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DO - 10.1063/1.4992141

M3 - Article

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SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 024101

ER -

A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

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