A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

Ming Hsuan Kao; Wen Hsien Huang; Jia Min Shieh; Chang Hong Shen; Pei Kang Lee; Hsing Hsiang Wang; Chih Chao Yang; Tung Ying Hsieh; Peichen Yu

doi:10.1063/1.4992141

A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

Ming Hsuan Kao, Wen Hsien Huang, Jia Min Shieh, Chang Hong Shen, Pei Kang Lee, Hsing Hsiang Wang, Chih Chao Yang, Tung Ying Hsieh, Peichen Yu

光電工程學系

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6 引文斯高帕斯（Scopus）

摘要

A sandwiched buffer layer of SiO₂/Al/SiO₂ enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO₂ interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 10⁶ and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.

原文	English
文章編號	024101
期刊	Applied Physics Letters
卷	111
發行號	2
DOIs	https://doi.org/10.1063/1.4992141
出版狀態	Published - 10 7月 2017

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10.1063/1.4992141

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@article{fcd716a6aafe4e3b8f0055579c8e53ca,

title = "A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide",

abstract = "A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 106 and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.",

author = "Kao, {Ming Hsuan} and Huang, {Wen Hsien} and Shieh, {Jia Min} and Shen, {Chang Hong} and Lee, {Pei Kang} and Wang, {Hsing Hsiang} and Yang, {Chih Chao} and Hsieh, {Tung Ying} and Peichen Yu",

year = "2017",

month = jul,

day = "10",

doi = "10.1063/1.4992141",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

AU - Kao, Ming Hsuan

AU - Huang, Wen Hsien

AU - Shieh, Jia Min

AU - Shen, Chang Hong

AU - Lee, Pei Kang

AU - Wang, Hsing Hsiang

AU - Yang, Chih Chao

AU - Hsieh, Tung Ying

AU - Yu, Peichen

PY - 2017/7/10

Y1 - 2017/7/10

N2 - A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 106 and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.

AB - A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 106 and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.

UR - http://www.scopus.com/inward/record.url?scp=85023769425&partnerID=8YFLogxK

U2 - 10.1063/1.4992141

DO - 10.1063/1.4992141

M3 - Article

AN - SCOPUS:85023769425

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 024101

ER -

A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

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