A Resistive-Gated IGFET Tetrode

Chen-Ming Hu, Richard S. Muller

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Studies of the properties of a new insulated-gate field-effect tetrode which Consists basically of an IGFET triode having a resistive-gate electrode with connections transverse to the source-drain dimension are described. Experimental tetrodes on silicon with nichrome gates are fabricated to demonstrate applications of the device as a mixer, an amplitude modulator, and an AGC amplifier. Theories are also developed to calculate the static and the high-frequency characteristics of the tetrode, and are found to be in good agreement with the experimental results.

原文English
頁(從 - 到)418-425
頁數8
期刊IEEE Transactions on Electron Devices
18
發行號7
DOIs
出版狀態Published - 1 1月 1971

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