A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering

Ray-Hua Horng*, D. S. Wuu, S. C. Wei, S. H. Chan, C. Y. Kung

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The persistent photoconductivity (PPC) behavior has been characterized in sputtered GaN thin films using the room illumination with a wavelength of 254 nm under a 5-V bias. It was found that the N2 partial pressure in the sputtering atmosphere has an evident effect on the PPC behavior. The obtained data show that the nitrogen vacancy is the candidate for PPC effect in the sputtered GaN film. At lower N2 partial pressures, the nitrogen vacancy can be induced and resulted in GaN films with more donor levels as compared with those of samples deposited at higher N2 contents. An energy band model that can account for the experimental observation of PPC behavior is proposed.

原文English
頁(從 - 到)642-645
頁數4
期刊Thin Solid Films
343-344
發行號1-2
DOIs
出版狀態Published - 1 1月 1999

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