A reliable Schottky barrier height extraction procedure

Bing-Yue Tsui, Tze Yu Fu

    研究成果: Conference contribution同行評審

    摘要

    This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (∼0.3 eV) and high doping concentration (∼1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.

    原文English
    主出版物標題2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面196-199
    頁數4
    ISBN(電子)9781467387934
    DOIs
    出版狀態Published - 20 5月 2016
    事件29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Yokohama, Japan
    持續時間: 28 3月 201631 3月 2016

    出版系列

    名字IEEE International Conference on Microelectronic Test Structures
    2016-May

    Conference

    Conference29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
    國家/地區Japan
    城市Yokohama
    期間28/03/1631/03/16

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