TY - GEN
T1 - A polar modulated CMOS class-E amplifier with a class-F driver stage
AU - Tsou, Wen A.
AU - Wuen, Wen Shen
AU - Wen, Kuei-Ann
PY - 2009/12/1
Y1 - 2009/12/1
N2 - This work presents a fully integrated polar modulated CMOS class-E amplifier in a 0.18 μm CMOS process. The amplifier using the device-stacking topology is implemented with a self-biased control circuit, which allows the stacked device operating as a resistance, for linearizing the AM-AM and AM-PM distortion. The simulation result shows that the AM-PM distortion is reduced from 18 degrees to 3 degrees. The linearized class-E amplifier with the class-F driver stage can provide the maximum power gain of 21 dB, the maximum output power of 17 dBm, and the peak power-added efficiency (PAE) of 30% from the supply voltage of 2 V.
AB - This work presents a fully integrated polar modulated CMOS class-E amplifier in a 0.18 μm CMOS process. The amplifier using the device-stacking topology is implemented with a self-biased control circuit, which allows the stacked device operating as a resistance, for linearizing the AM-AM and AM-PM distortion. The simulation result shows that the AM-PM distortion is reduced from 18 degrees to 3 degrees. The linearized class-E amplifier with the class-F driver stage can provide the maximum power gain of 21 dB, the maximum output power of 17 dBm, and the peak power-added efficiency (PAE) of 30% from the supply voltage of 2 V.
UR - http://www.scopus.com/inward/record.url?scp=77649318255&partnerID=8YFLogxK
U2 - 10.1109/IITA.2009.403
DO - 10.1109/IITA.2009.403
M3 - Conference contribution
AN - SCOPUS:77649318255
SN - 9780769538594
T3 - 3rd International Symposium on Intelligent Information Technology Application, IITA 2009
SP - 658
EP - 661
BT - 3rd International Symposium on Intelligent Information Technology Application, IITA 2009
Y2 - 21 November 2009 through 22 November 2009
ER -