A physics-based transit time model for GaInP/GaAs HBT devices

Sheng Che Tseng*, Chin-Chun Meng, Wei Yu Chen, Jen Yi Su

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (IC, VCE) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (IC, VCE) more precisely. This model has obvious advantage over the VBIC model to show the relation between the ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices.

原文English
主出版物標題APMC 2005
主出版物子標題Asia-Pacific Microwave Conference Proceedings 2005
頁面1-4
頁數4
DOIs
出版狀態Published - 4 十二月 2005
事件APMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China
持續時間: 4 十二月 20057 十二月 2005

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
2

Conference

ConferenceAPMC 2005: Asia-Pacific Microwave Conference 2005
國家/地區China
城市Suzhou
期間4/12/057/12/05

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