A p-Type Ferroelectric Field-Effect Transistor Using Ultrathin Hafnium Aluminum Oxide

Chun Hu Cheng*, Chien Liu, Yi Chun Tung, Hsuan Han Chen, Ruo Yin Liao, Wu-Ching Chou

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Herein, the electrical characteristics of a p-type negative-capacitance field-effect transistor are investigated using an ultrathin 2.5 nm-thick HfAlOx. The optimized performance exhibits a steep subthreshold slope of 35 mV dec−1, a negligible hysteresis of 4 mV, and a low off-state current of 3 × 10−13A μm−1. Appropriate aluminum doping into HfAlOx film can not only improve the leakage current but also stabilize the negative-capacitance matching. The prominent improvement on the capacitance matching and ferroelectricity can be ascribed to the reduced defect traps and less dielectric crystalline phase during annealing, which is important for the practical application of energy-efficient logic devices.

原文English
文章編號2000356
頁(從 - 到)1-4
頁數4
期刊Physica Status Solidi - Rapid Research Letters
14
發行號12
DOIs
出版狀態Published - 12月 2020

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