摘要
Time-sampling measurements are used in this paper to build time dependent L TPS TFT current model The device model that considers bias and time dependent threshold voltage (Vth) shift and mobility degradation is implemented in Eldo through GUDM for simulating a pixel circuit as an indicator of panel performance.
原文 | English |
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頁(從 - 到) | 1123-1126 |
頁數 | 4 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 46 |
發行號 | Book 3 |
DOIs | |
出版狀態 | Published - 1 6月 2015 |
事件 | 2015 SID International Symposium - San Jose, United States 持續時間: 2 6月 2015 → 3 6月 2015 |