A novel technique for growing crack-free GaN thick film by hydride vapor phase epitaxy

Hsin Hsiung Huang*, Kuei Ming Chen, Li Wei Tu, Ting Li Chu, Pei Lun Wu, Hung Wei Yu, Chen Hao Chiang, Wei I. Lee

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

To prevent the cracking of GaN thick films grown on a sapphire substrate by hydride vapor phase epitaxy (HVPE), a novel technique without complex processes is developed. By adding a temperature ramping step in the HVPE GaN epitaxy process, more than 300-μm-thick high-quality crack-free GaN thick films on sapphire substrate can be obtained by this technique. After separation by a conventional laser-induced lift-off process, a 1.5 in. 300 μm freestanding GaN wafer with a dislocation density of approximately 1 × 107 cm-2 could be fabricated without any cracks. No additional designed-patterned or stress-reduced structures were applied in these samples to reduce the dislocation density and thermal stress.

原文English
頁(從 - 到)8394-8396
頁數3
期刊Japanese Journal of Applied Physics
47
發行號11
DOIs
出版狀態Published - 14 11月 2008

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