A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage

Keyphrases

• Active Channel 20%
• Breakdown Voltage 100%
• Drain Regions 20%
• Electrical Characteristics 20%
• Fabrication Methods 20%
• High Vacuum Chemical Vapor Deposition 20%
• Low Leakage Current 20%
• On-state Current 100%
• Optimum Performance 20%
• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 100%
• Raised Source Drain 100%
• Self-aligned 40%
• SiGe 100%
• Structure Feature 20%
• Transistor Structure 20%
• Ultrathin 20%

Engineering

• Active Channel 50%
• Breakdown Voltage 100%
• Channel Region 50%
• Chemical Vapor Deposition 50%
• Deposition Process 50%
• Drain Region 50%
• Optimum Performance 50%
• Polysilicon 100%
• Thin-Film Transistor 100%
• Vapor Deposition 50%

Material Science

• Chemical Vapor Deposition 50%
• Electrical Property 50%
• Silicon 100%
• Thin-Film Transistor 100%
• Transistor 50%
• Vapor Phase Deposition 50%