In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.
|頁（從 - 到）||3852-3855|
|期刊||Journal of the Electrochemical Society|
|出版狀態||Published - 1 1月 1999|