A novel Si-B diffusion source for p+-poly-Si gate

Tien-Sheng Chao; Chung Ping Kuo; T. P. Chen; Tan Fu Lei

doi:10.1149/1.1392563

A novel Si-B diffusion source for p⁺-poly-Si gate

Tien-Sheng Chao^*, Chung Ping Kuo, T. P. Chen, Tan Fu Lei

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

摘要

In this paper, we report a novel Si-B diffusion source for p⁺-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.

原文	English
頁（從 - 到）	3852-3855
頁數	4
期刊	Journal of the Electrochemical Society
卷	146
發行號	10
DOIs	https://doi.org/10.1149/1.1392563
出版狀態	Published - 1 1月 1999

UN SDG

此研究成果有助於以下永續發展目標

存取文件

10.1149/1.1392563

其它文件與鏈接

Link to publication in Scopus

引用此

@article{d183e21b35704eaba73f738630d0e9e3,

title = "A novel Si-B diffusion source for p+-poly-Si gate",

abstract = "In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.",

author = "Tien-Sheng Chao and Kuo, {Chung Ping} and Chen, {T. P.} and Lei, {Tan Fu}",

year = "1999",

month = jan,

day = "1",

doi = "10.1149/1.1392563",

language = "English",

volume = "146",

pages = "3852--3855",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - A novel Si-B diffusion source for p+-poly-Si gate

AU - Chao, Tien-Sheng

AU - Kuo, Chung Ping

AU - Chen, T. P.

AU - Lei, Tan Fu

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.

AB - In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=0033321495&partnerID=8YFLogxK

U2 - 10.1149/1.1392563

DO - 10.1149/1.1392563

M3 - Article

AN - SCOPUS:0033321495

SN - 0013-4651

VL - 146

SP - 3852

EP - 3855

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

A novel Si-B diffusion source for p+-poly-Si gate

摘要

UN SDG

存取文件

其它文件與鏈接

指紋

引用此

A novel Si-B diffusion source for p⁺-poly-Si gate