A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

Mohammed Zackriya; Harish M. Kittur; Albert Chin

doi:10.1038/srep42375

A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

Mohammed Zackriya
, Harish M. Kittur
, Albert Chin^*

^*此作品的通信作者

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49 引文斯高帕斯（Scopus）

摘要

The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

原文	English
文章編號	42375
期刊	Scientific reports
卷	7
DOIs	https://doi.org/10.1038/srep42375
出版狀態	Published - 10 2月 2017

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10.1038/srep42375

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abstract = "The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.",

author = "Mohammed Zackriya and Kittur, \{Harish M.\} and Albert Chin",

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N2 - The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

AB - The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

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A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

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