A novel pixel design for AM-OLED displays using nanocrystalline silicon TFTs

Chen Wei Lin*, Chia-Tso Chao, Yen Shih Huang

*此作品的通信作者

    研究成果: Article同行評審

    12 引文 斯高帕斯(Scopus)

    摘要

    This paper presents a novel pixel design for active matrix organic light emitting diode (AM-OLED) displays using nanocrystalline silicon thin-film transistors (TFTs). The proposed pixel design can effectively reduce the variation of its stored display data caused by the leakage current of nanocrystalline silicon TFTs, which can in turn increase the contrast resolution of AM-OLED displays. With a proper setting of its capacitors, the proposed pixel design can achieve a 5.55× reduction on its display-data variation while requiring only a 1.15× write time when compared to the typical pixel design. The aperture ratio resulting from the layout of the proposed pixel design can also be maintained above 40%, which satisfies the specification of most AM-OLED displays. A series of simulations as well as measurement results are provided to validate the effectiveness of the proposed pixel design.

    原文English
    文章編號5428768
    頁(從 - 到)939-952
    頁數14
    期刊IEEE Transactions on Very Large Scale Integration (VLSI) Systems
    19
    發行號6
    DOIs
    出版狀態Published - 1 6月 2011

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