A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin; E. R. Hsieh; T. C. Kao; M. Y. Lee; J. K. Chang; J. C. Guo; S. S. Chung; T. P. Chen; S. A. Huang; T. J. Chen; O. Cheng

doi:10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin, E. R. Hsieh^*, T. C. Kao, M. Y. Lee, J. K. Chang, J. C. Guo, S. S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, O. Cheng

^*此作品的通信作者

電機工程學系

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

原文	English
主出版物標題	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9770980
出版狀態	Published - 2022
事件	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan 持續時間: 18 4月 2022 → 21 4月 2022

出版系列

名字	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區	Taiwan
城市	Hsinchu
期間	18/04/22 → 21/04/22

存取文件

10.1109/VLSI-TSA54299.2022.9770980

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, L. C., Hsieh, E. R., Kao, T. C., Lee, M. Y., Chang, J. K., Guo, J. C., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J., & Cheng, O. (2022). A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9770980

Lin, L. C. ; Hsieh, E. R. ; Kao, T. C. 等. / A Novel Physical Unclonable Function : NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{f921dd6c468347feac830aad50948521,

title = "A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform",

abstract = "For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.",

author = "Lin, {L. C.} and Hsieh, {E. R.} and Kao, {T. C.} and Lee, {M. Y.} and Chang, {J. K.} and Guo, {J. C.} and Chung, {S. S.} and Chen, {T. P.} and Huang, {S. A.} and Chen, {T. J.} and O. Cheng",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; null ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9770980",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "United States",

}

Lin, LC, Hsieh, ER, Kao, TC, Lee, MY, Chang, JK, Guo, JC, Chung, SS, Chen, TP, Huang, SA, Chen, TJ & Cheng, O 2022, A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function : NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. / Lin, L. C.; Hsieh, E. R.; Kao, T. C. 等.

2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A Novel Physical Unclonable Function

AU - Lin, L. C.

AU - Hsieh, E. R.

AU - Kao, T. C.

AU - Lee, M. Y.

AU - Chang, J. K.

AU - Guo, J. C.

AU - Chung, S. S.

AU - Chen, T. P.

AU - Huang, S. A.

AU - Chen, T. J.

AU - Cheng, O.

PY - 2022

Y1 - 2022

N2 - For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

AB - For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

UR - http://www.scopus.com/inward/record.url?scp=85130506305&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA54299.2022.9770980

DO - 10.1109/VLSI-TSA54299.2022.9770980

M3 - Conference contribution

AN - SCOPUS:85130506305

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 18 April 2022 through 21 April 2022

ER -

Lin LC, Hsieh ER, Kao TC, Lee MY, Chang JK, Guo JC 等. A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

摘要

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Conference

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