TY - JOUR
T1 - A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals
AU - Chiang, Tsung Yu
AU - Ma, William Cheng Yu
AU - Wu, Yi Hong
AU - Wang, Kuan Ti
AU - Chao, Tien-Sheng
PY - 2010/11/1
Y1 - 2010/11/1
N2 - In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.
AB - In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.
KW - Band-to-band tunneling (BTBT)
KW - nonvolatile memory (NVM)
KW - p-n diode (PND)
KW - silicon nanocrystal (Si-NC)
KW - thin-film transistor (TFT)
UR - http://www.scopus.com/inward/record.url?scp=78049288174&partnerID=8YFLogxK
U2 - 10.1109/LED.2010.2064153
DO - 10.1109/LED.2010.2064153
M3 - Article
AN - SCOPUS:78049288174
SN - 0741-3106
VL - 31
SP - 1239
EP - 1241
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 11
M1 - 5565385
ER -