A novel normally-off camel diode gate GaAs field-effect transistor

T. J. Drummond*, Ta-Hui Wang, W. Kopp, H. Morkoç, R. E. Thorne, S. L. Su

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A novel normally-off GaAs field-effect transistor utilizing a "camel diode" in place of a Schottky barrier and exhibiting excellent properties was demonstrated. The devicies have channel lengths of 3 or 4 μm, gate lengths of approximately 3 or 4 μm, and gate widths of 290 μm. The layers from which the devices were fabricated were prepared by molecular beam epitaxy and consisted of a 1-μm-thick Al 0.3 Ga 0.7 As buffer, an ∼500-Å GaAs layer doped to a level of 1.5×10 17 cm -3 to form the channel, and 100-Å p + Al 0.47 Ga 0.53 As and 400-Å n + GaAs layers to form the gate. The devices exhibited transconductances as high as 80 mS/mm and excellent saturation characteristics.

原文English
頁(從 - 到)834-836
頁數3
期刊Applied Physics Letters
40
發行號9
DOIs
出版狀態Published - 1 12月 1982

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