A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

Shih Ching Chen; Ting Chang Chang; Po-Tsun Liu; Yung Chun Wu; Po Shun Lin; Bae Heng Tseng; Jang Hung Shy; S. M. Sze; Chun Yen Chang; Chen Hsin Lien

doi:10.1109/LED.2007.903885

A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

Shih Ching Chen^*, Ting Chang Chang, Po-Tsun Liu, Yung Chun Wu, Po Shun Lin, Bae Heng Tseng, Jang Hung Shy, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

59 引文斯高帕斯（Scopus）

摘要

In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (V_th), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

原文	English
頁（從 - 到）	809-811
頁數	3
期刊	Ieee Electron Device Letters
卷	28
發行號	9
DOIs	https://doi.org/10.1109/LED.2007.903885
出版狀態	Published - 2007

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10.1109/LED.2007.903885

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title = "A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory",

abstract = "In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (Vth), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.",

keywords = "Nanowire (NW), Nonvolatile memory, Polysilicon (poly-Si), Silicon-oxide-nitride-oxide-silicon (SONOS), Thin-film transistor (TFT)",

author = "Chen, {Shih Ching} and Chang, {Ting Chang} and Po-Tsun Liu and Wu, {Yung Chun} and Lin, {Po Shun} and Tseng, {Bae Heng} and Shy, {Jang Hung} and Sze, {S. M.} and Chang, {Chun Yen} and Lien, {Chen Hsin}",

year = "2007",

doi = "10.1109/LED.2007.903885",

language = "English",

volume = "28",

pages = "809--811",

journal = "Ieee Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

AU - Chen, Shih Ching

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Wu, Yung Chun

AU - Lin, Po Shun

AU - Tseng, Bae Heng

AU - Shy, Jang Hung

AU - Sze, S. M.

AU - Chang, Chun Yen

AU - Lien, Chen Hsin

PY - 2007

Y1 - 2007

N2 - In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (Vth), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

AB - In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (Vth), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

KW - Nanowire (NW)

KW - Nonvolatile memory

KW - Polysilicon (poly-Si)

KW - Silicon-oxide-nitride-oxide-silicon (SONOS)

KW - Thin-film transistor (TFT)

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U2 - 10.1109/LED.2007.903885

DO - 10.1109/LED.2007.903885

M3 - Article

AN - SCOPUS:60049094231

SN - 0741-3106

VL - 28

SP - 809

EP - 811

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 9

ER -

A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

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