A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement

Hang Ting Lue*, Tseung-Yuen Tseng, Guo Wei Huang

*此作品的通信作者

    研究成果: Paper同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Ω-cm (normal) and 10 kΩ-cm (high-resistivity, HR) silicon substrates at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.

    原文English
    頁面101-106
    頁數6
    DOIs
    出版狀態Published - 11 4月 2002
    事件Proceedings of The 2002 International Conference on Microelectronic Test Structures - Cork, Ireland
    持續時間: 8 4月 200211 4月 2002

    Conference

    ConferenceProceedings of The 2002 International Conference on Microelectronic Test Structures
    國家/地區Ireland
    城市Cork
    期間8/04/0211/04/02

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