A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement

Hang Ting Lue; Tseung-Yuen Tseng; Guo Wei Huang

doi:10.1109/ICMTS.2002.1193179

A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement

Hang Ting Lue^*, Tseung-Yuen Tseng, Guo Wei Huang

^*此作品的通信作者

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Ω-cm (normal) and 10 kΩ-cm (high-resistivity, HR) silicon substrates at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.

原文	English
頁面	101-106
頁數	6
DOIs	https://doi.org/10.1109/ICMTS.2002.1193179
出版狀態	Published - 11 4月 2002
事件	Proceedings of The 2002 International Conference on Microelectronic Test Structures - Cork, Ireland 持續時間: 8 4月 2002 → 11 4月 2002

Conference

Conference	Proceedings of The 2002 International Conference on Microelectronic Test Structures
國家/地區	Ireland
城市	Cork
期間	8/04/02 → 11/04/02

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10.1109/ICMTS.2002.1193179

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引用此

@conference{92b88ebd24b94fd8bb4fd5e65bdc7c01,

title = "A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement",

abstract = "We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Ω-cm (normal) and 10 kΩ-cm (high-resistivity, HR) silicon substrates at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.",

author = "Lue, {Hang Ting} and Tseung-Yuen Tseng and Huang, {Guo Wei}",

year = "2002",

month = apr,

day = "11",

doi = "10.1109/ICMTS.2002.1193179",

language = "English",

pages = "101--106",

note = "null ; Conference date: 08-04-2002 Through 11-04-2002",

}

TY - CONF

T1 - A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement

AU - Lue, Hang Ting

AU - Tseng, Tseung-Yuen

AU - Huang, Guo Wei

PY - 2002/4/11

Y1 - 2002/4/11

N2 - We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Ω-cm (normal) and 10 kΩ-cm (high-resistivity, HR) silicon substrates at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.

AB - We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Ω-cm (normal) and 10 kΩ-cm (high-resistivity, HR) silicon substrates at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.

UR - http://www.scopus.com/inward/record.url?scp=0038495587&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2002.1193179

DO - 10.1109/ICMTS.2002.1193179

M3 - Paper

AN - SCOPUS:0038495587

SP - 101

EP - 106

Y2 - 8 April 2002 through 11 April 2002

ER -

A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement

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