摘要
Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method.
原文 | English |
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頁(從 - 到) | 3261-3264 |
頁數 | 4 |
期刊 | Surface and Coatings Technology |
卷 | 200 |
發行號 | 10 SPEC. ISS. |
DOIs | |
出版狀態 | Published - 24 2月 2006 |