A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

Steve S. Chung; P. Y. Chiang; George Chou; C. T. Huang; Paul Chen; C. H. Chu; Charles C.H. Hsu

doi:10.1109/IEDM.2003.1269357

A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

Steve S. Chung^*, P. Y. Chiang, George Chou, C. T. Huang, Paul Chen, C. H. Chu, Charles C.H. Hsu

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研究成果: Conference article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

原文	English
頁（從 - 到）	617-620
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2003.1269357
出版狀態	Published - 1 12月 2003
事件	IEEE International Electron Devices Meeting - Washington, DC, 美國持續時間: 8 12月 2003 → 10 12月 2003

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10.1109/IEDM.2003.1269357

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@article{8b1e6f2b75a6427eb284b92db76a2dc8,

title = "A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell",

abstract = "In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.",

author = "Chung, {Steve S.} and Chiang, {P. Y.} and George Chou and Huang, {C. T.} and Paul Chen and Chu, {C. H.} and Hsu, {Charles C.H.}",

year = "2003",

month = dec,

day = "1",

doi = "10.1109/IEDM.2003.1269357",

language = "English",

pages = "617--620",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

AU - Chung, Steve S.

AU - Chiang, P. Y.

AU - Chou, George

AU - Huang, C. T.

AU - Chen, Paul

AU - Chu, C. H.

AU - Hsu, Charles C.H.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

AB - In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

UR - http://www.scopus.com/inward/record.url?scp=0842288188&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2003.1269357

DO - 10.1109/IEDM.2003.1269357

M3 - Conference article

AN - SCOPUS:0842288188

SN - 0163-1918

SP - 617

EP - 620

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

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