A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

Steve S. Chung*, P. Y. Chiang, George Chou, C. T. Huang, Paul Chen, C. H. Chu, Charles C.H. Hsu

*此作品的通信作者

    研究成果: Conference article同行評審

    21 引文 斯高帕斯(Scopus)

    摘要

    In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

    原文English
    頁(從 - 到)617-620
    頁數4
    期刊Technical Digest - International Electron Devices Meeting
    DOIs
    出版狀態Published - 1 12月 2003
    事件IEEE International Electron Devices Meeting - Washington, DC, United States
    持續時間: 8 12月 200310 12月 2003

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