A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

Steve S. Chung*, P. Y. Chiang, George Chou, C. T. Huang, Paul Chen, C. H. Chu, Charles C.H. Hsu

*此作品的通信作者

研究成果: Conference article同行評審

20 引文 斯高帕斯(Scopus)

摘要

In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

原文English
頁(從 - 到)617-620
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 十二月 2003
事件IEEE International Electron Devices Meeting - Washington, DC, United States
持續時間: 8 十二月 200310 十二月 2003

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