A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

Steve S. Chung; P. Y. Chiang; George Chou; C. T. Huang; Paul Chen; C. H. Chu; Charles C.H. Hsu

doi:10.1109/IEDM.2003.1269357

A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

Steve S. Chung^*, P. Y. Chiang, George Chou, C. T. Huang, Paul Chen, C. H. Chu, Charles C.H. Hsu

^*此作品的通信作者

電子工程學系

研究成果: Conference article › 同行評審

20 引文斯高帕斯（Scopus）

摘要

In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

原文	English
頁（從 - 到）	617-620
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2003.1269357
出版狀態	Published - 1 十二月 2003
事件	IEEE International Electron Devices Meeting - Washington, DC, United States 持續時間: 8 十二月 2003 → 10 十二月 2003

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10.1109/IEDM.2003.1269357

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title = "A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell",

abstract = "In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.",

author = "Chung, {Steve S.} and Chiang, {P. Y.} and George Chou and Huang, {C. T.} and Paul Chen and Chu, {C. H.} and Hsu, {Charles C.H.}",

year = "2003",

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language = "English",

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T1 - A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

AU - Chung, Steve S.

AU - Chiang, P. Y.

AU - Chou, George

AU - Huang, C. T.

AU - Chen, Paul

AU - Chu, C. H.

AU - Hsu, Charles C.H.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

AB - In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.

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DO - 10.1109/IEDM.2003.1269357

M3 - Conference article

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SP - 617

EP - 620

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 8 December 2003 through 10 December 2003

ER -

A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

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