A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Y. J. Lee*, T. C. Cho, K. H. Kao, P. J. Sung, F. K. Hsueh, P. C. Huang, C. T. Wu, S. H. Hsu, W. H. Huang, H. C. Chen, Yi-Ming Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J. M. Shieh, Tien-Sheng Chao, W. F. Wu, W. K. Yeh

*此作品的通信作者

研究成果: Conference article同行評審

24 引文 斯高帕斯(Scopus)

摘要

For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

原文English
文章編號7047158
頁(從 - 到)32.7.1-32.7.4
期刊Technical Digest - International Electron Devices Meeting, IEDM
2015-February
發行號February
DOIs
出版狀態Published - 20 2月 2015
事件2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
持續時間: 15 12月 201417 12月 2014

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