A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Y. J. Lee; T. C. Cho; K. H. Kao; P. J. Sung; F. K. Hsueh; P. C. Huang; C. T. Wu; S. H. Hsu; W. H. Huang; H. C. Chen; Yi-Ming Li; M. I. Current; B. Hengstebeck; J. Marino; T. Büyüklimanli; J. M. Shieh; Tien-Sheng Chao; W. F. Wu; W. K. Yeh

doi:10.1109/IEDM.2014.7047158

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Y. J. Lee^*, T. C. Cho, K. H. Kao, P. J. Sung, F. K. Hsueh, P. C. Huang, C. T. Wu, S. H. Hsu, W. H. Huang, H. C. Chen, Yi-Ming Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J. M. Shieh, Tien-Sheng Chao, W. F. Wu, W. K. Yeh

^*此作品的通信作者

研究成果: Conference article › 同行評審

26 引文斯高帕斯（Scopus）

摘要

For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>10⁶) for both n and p channel devices. Threshold voltage (V_TH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

原文	English
文章編號	7047158
頁（從 - 到）	32.7.1-32.7.4
期刊	Technical Digest - International Electron Devices Meeting, IEDM
卷	2015-February
發行號	February
DOIs	https://doi.org/10.1109/IEDM.2014.7047158
出版狀態	Published - 20 2月 2015
事件	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States 持續時間: 15 12月 2014 → 17 12月 2014

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10.1109/IEDM.2014.7047158

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Lee, Y. J., Cho, T. C., Kao, K. H., Sung, P. J., Hsueh, F. K., Huang, P. C., Wu, C. T., Hsu, S. H., Huang, W. H., Chen, H. C., Li, Y-M., Current, M. I., Hengstebeck, B., Marino, J., Büyüklimanli, T., Shieh, J. M., Chao, T-S., Wu, W. F., & Yeh, W. K. (2015). A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing. Technical Digest - International Electron Devices Meeting, IEDM, 2015-February(February), 32.7.1-32.7.4. 文章 7047158. https://doi.org/10.1109/IEDM.2014.7047158

@article{c12b2890fd444fd9ac9f9266f9a6b756,

title = "A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing",

abstract = "For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.",

author = "Lee, {Y. J.} and Cho, {T. C.} and Kao, {K. H.} and Sung, {P. J.} and Hsueh, {F. K.} and Huang, {P. C.} and Wu, {C. T.} and Hsu, {S. H.} and Huang, {W. H.} and Chen, {H. C.} and Yi-Ming Li and Current, {M. I.} and B. Hengstebeck and J. Marino and T. B{\"u}y{\"u}klimanli and Shieh, {J. M.} and Tien-Sheng Chao and Wu, {W. F.} and Yeh, {W. K.}",

year = "2015",

month = feb,

day = "20",

doi = "10.1109/IEDM.2014.7047158",

language = "English",

volume = "2015-February",

pages = "32.7.1--32.7.4",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "February",

note = "2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

}

Lee, YJ, Cho, TC, Kao, KH, Sung, PJ, Hsueh, FK, Huang, PC, Wu, CT, Hsu, SH, Huang, WH, Chen, HC, Li, Y-M, Current, MI, Hengstebeck, B, Marino, J, Büyüklimanli, T, Shieh, JM, Chao, T-S, Wu, WF & Yeh, WK 2015, 'A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing', Technical Digest - International Electron Devices Meeting, IEDM, 卷 2015-February, 編號 February, 7047158, 頁 32.7.1-32.7.4. https://doi.org/10.1109/IEDM.2014.7047158

TY - JOUR

T1 - A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

AU - Lee, Y. J.

AU - Cho, T. C.

AU - Kao, K. H.

AU - Sung, P. J.

AU - Hsueh, F. K.

AU - Huang, P. C.

AU - Wu, C. T.

AU - Hsu, S. H.

AU - Huang, W. H.

AU - Chen, H. C.

AU - Li, Yi-Ming

AU - Current, M. I.

AU - Hengstebeck, B.

AU - Marino, J.

AU - Büyüklimanli, T.

AU - Shieh, J. M.

AU - Chao, Tien-Sheng

AU - Wu, W. F.

AU - Yeh, W. K.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

AB - For the first time, a novel junctionless (JL) FinFET structure with a shell doping profile (SDP) formed by molecular monolayer doping (MLD) method and microwave annealing (MWA) at low temperature is proposed and studied. Thanks to the ultra thin SDP leading to an easily-depleted channel, the proposed JLFinFET can retain the ideal subthreshold swing (∼ 60 mV/dec) at a high doping level according to simulations. Poly Si based JLFinFETs processed with MLD and MWA exhibit superior subthreshold swing (S.S. ∼ 67mV/dec) and excellent on-off ratio (>106) for both n and p channel devices. Threshold voltage (VTH) variation due to random dopant fluctuation (RDF) is reduced in MLD-JLFinFETs, which can be attributed to the molecule self-limiting property of MLD on the Si surface and quasi-diffusionless MWA at low temperature. Our results reveal the potential of the proposed SDP enabling a JLFET showing reduced variation and outstanding performance for low power applications.

UR - http://www.scopus.com/inward/record.url?scp=84938268443&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2014.7047158

DO - 10.1109/IEDM.2014.7047158

M3 - Conference article

AN - SCOPUS:84938268443

SN - 0163-1918

VL - 2015-February

SP - 32.7.1-32.7.4

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

IS - February

M1 - 7047158

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

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