A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

Horng-Chih Lin; C. Y. Lin; K. L. Yeh; R. G. Huang; M. F. Wang; C. M. Yu; T. Y. Huang; S. M. Sze

doi:10.1109/IEDM.2000.904452

A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

Horng-Chih Lin, C. Y. Lin, K. L. Yeh, R. G. Huang, M. F. Wang, C. M. Yu, T. Y. Huang, S. M. Sze

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研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

A novel thin film transistor (TFT) capable of ambipolar operation is demonstrated. The field induced source drain region supplies abundant channel carriers during on-state. On the other hand, the region reduces off-state leakage. The suggested device structure and fabrication is advantageous in making the overall process simple and suitable for low temperature manufacturing. The ambipolar mode with superior characteristic is demonstrated.

原文	English
頁（從 - 到）	857-859
頁數	3
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2000.904452
出版狀態	Published - 2000

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10.1109/IEDM.2000.904452

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abstract = "A novel thin film transistor (TFT) capable of ambipolar operation is demonstrated. The field induced source drain region supplies abundant channel carriers during on-state. On the other hand, the region reduces off-state leakage. The suggested device structure and fabrication is advantageous in making the overall process simple and suitable for low temperature manufacturing. The ambipolar mode with superior characteristic is demonstrated.",

author = "Horng-Chih Lin and Lin, {C. Y.} and Yeh, {K. L.} and Huang, {R. G.} and Wang, {M. F.} and Yu, {C. M.} and Huang, {T. Y.} and Sze, {S. M.}",

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doi = "10.1109/IEDM.2000.904452",

language = "English",

pages = "857--859",

journal = "Technical Digest - International Electron Devices Meeting",

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T1 - A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

AU - Lin, Horng-Chih

AU - Lin, C. Y.

AU - Yeh, K. L.

AU - Huang, R. G.

AU - Wang, M. F.

AU - Yu, C. M.

AU - Huang, T. Y.

AU - Sze, S. M.

PY - 2000

Y1 - 2000

N2 - A novel thin film transistor (TFT) capable of ambipolar operation is demonstrated. The field induced source drain region supplies abundant channel carriers during on-state. On the other hand, the region reduces off-state leakage. The suggested device structure and fabrication is advantageous in making the overall process simple and suitable for low temperature manufacturing. The ambipolar mode with superior characteristic is demonstrated.

AB - A novel thin film transistor (TFT) capable of ambipolar operation is demonstrated. The field induced source drain region supplies abundant channel carriers during on-state. On the other hand, the region reduces off-state leakage. The suggested device structure and fabrication is advantageous in making the overall process simple and suitable for low temperature manufacturing. The ambipolar mode with superior characteristic is demonstrated.

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U2 - 10.1109/IEDM.2000.904452

DO - 10.1109/IEDM.2000.904452

M3 - Article

AN - SCOPUS:0034446043

SN - 0163-1918

SP - 857

EP - 859

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -

A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

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