A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

You Chen Weng; Yueh Chin Lin; Heng Tung Hsu; Min Lu Kao; Hsuan Yao Huang; Daisuke Ueda; Minh Thien Huu Ha; Chih Yi Yang; Jer Shen Maa; Edward Yi Chang; Chang Fu Dee

doi:10.3390/ma15030703

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

You Chen Weng, Yueh Chin Lin, Heng Tung Hsu, Min Lu Kao, Hsuan Yao Huang, Daisuke Ueda, Minh Thien Huu Ha, Chih Yi Yang, Jer Shen Maa, Edward Yi Chang^*, Chang Fu Dee

^*此作品的通信作者

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave appli-cations. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a P_out of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.

原文	English
文章編號	703
頁（從 - 到）	1-10
頁數	10
期刊	Materials
卷	15
發行號	3
DOIs	https://doi.org/10.3390/ma15030703
出版狀態	Published - 1 2月 2022

存取文件

10.3390/ma15030703

其它文件與鏈接

Link to publication in Scopus

引用此

@article{b8e7680689c64743967cefe9cb2d9f86,

title = "A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer",

abstract = "An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave appli-cations. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.",

keywords = "Electron-blocking layer, GaN, HEMT",

author = "Weng, {You Chen} and Lin, {Yueh Chin} and Hsu, {Heng Tung} and Kao, {Min Lu} and Huang, {Hsuan Yao} and Daisuke Ueda and Ha, {Minh Thien Huu} and Yang, {Chih Yi} and Maa, {Jer Shen} and Chang, {Edward Yi} and Dee, {Chang Fu}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = feb,

day = "1",

doi = "10.3390/ma15030703",

language = "English",

volume = "15",

pages = "1--10",

journal = "Materials",

issn = "1996-1944",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "3",

}

TY - JOUR

T1 - A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

AU - Weng, You Chen

AU - Lin, Yueh Chin

AU - Hsu, Heng Tung

AU - Kao, Min Lu

AU - Huang, Hsuan Yao

AU - Ueda, Daisuke

AU - Ha, Minh Thien Huu

AU - Yang, Chih Yi

AU - Maa, Jer Shen

AU - Chang, Edward Yi

AU - Dee, Chang Fu

PY - 2022/2/1

Y1 - 2022/2/1

N2 - An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave appli-cations. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.

AB - An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave appli-cations. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.

KW - Electron-blocking layer

KW - GaN

KW - HEMT

UR - http://www.scopus.com/inward/record.url?scp=85123175090&partnerID=8YFLogxK

U2 - 10.3390/ma15030703

DO - 10.3390/ma15030703

M3 - Article

AN - SCOPUS:85123175090

SN - 1996-1944

VL - 15

SP - 1

EP - 10

JO - Materials

JF - Materials

IS - 3

M1 - 703

ER -

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

摘要

存取文件

其它文件與鏈接

指紋

引用此