A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

You Chen Weng, Yueh Chin Lin, Heng Tung Hsu, Min Lu Kao, Hsuan Yao Huang, Daisuke Ueda, Minh Thien Huu Ha, Chih Yi Yang, Jer Shen Maa, Edward Yi Chang*, Chang Fu Dee

*此作品的通信作者

研究成果: Article同行評審

摘要

An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave appli-cations. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.

原文English
文章編號703
頁(從 - 到)1-10
頁數10
期刊Materials
15
發行號3
DOIs
出版狀態Published - 1 2月 2022

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