A novel fully self-aligned process for high cell density trench gate power MOSFETs

Bing-Yue Tsui*, Tian Choy Gan, Ming Da Wu, Hui Hua Chou, Zhi Liang Wu, Ching Tzong Sune

*此作品的通信作者

    研究成果: Paper同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    A novel self-aligned process for high cell density trench gate power MOSFETs with only four mask layers was proposed. The specific on-resistance can be as low as 0.21 mΩ-cm2 with 1.5um cell pitch and 35V breakdown voltage. Because this process shrinks trench space but not trench width, the quasi-saturation phenomenon is lighter. After optimization the thickness of n- drift layer and n+ substrate, specific on-resistance lower than 0.1 mΩ-cm2 with 0.6um technology could be expected.

    原文English
    頁面205-208
    頁數4
    DOIs
    出版狀態Published - 5月 2004
    事件Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan
    持續時間: 24 5月 200427 5月 2004

    Conference

    ConferenceProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
    國家/地區Japan
    城市Kitakyushu
    期間24/05/0427/05/04

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