A novel four-mask-step low-temperature polysilicon thin-film transistor with self-aligned raised source/drain (SARSD)

Kow-Ming Chang*, Gin Min Lin, Cheng Guo Chen, Mon Fan Hsieh

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher ON-state current and a lower OFF-state leakage current. Moreover, the ON/OFF current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT.

原文English
頁(從 - 到)39-41
頁數3
期刊IEEE Electron Device Letters
28
發行號1
DOIs
出版狀態Published - 1 一月 2007

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