A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide

Keyphrases

• Low Temperature 100%
• Charge Storage 100%
• Amorphous Silicon Carbide 100%
• Storage Elements 100%
• Distributed Charges 100%
• SiCO 100%
• Oxidation Mechanism 66%
• Si-C 33%
• Manufacturing Process 33%
• Threshold Voltage Shift 33%
• Thermal Budget 33%
• Gate Stack 33%
• Bonding Mode 33%
• Memory Device 33%
• Write Operation 33%
• Non-volatile Memory 33%
• Large Memory Window 33%
• Dangling Bonds 33%
• Under-five 33%
• Si-O Bond 33%

Material Science

• Silicon Carbide 100%
• Oxidation Reaction 100%
• Amorphous Silicon 100%