A novel design of ferroelectric nanowire tunnel field effect transistors

Narasimhulu Thoti; Yi-Ming Li

doi:10.1109/VLSI-TSA51926.2021.9440098

A novel design of ferroelectric nanowire tunnel field effect transistors

Narasimhulu Thoti, Yi-Ming Li^*

^*此作品的通信作者

電信工程研究所

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec.

原文	English
主出版物標題	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665419345
DOIs	https://doi.org/10.1109/VLSI-TSA51926.2021.9440098
出版狀態	Published - 19 4月 2021
事件	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, 台灣持續時間: 19 4月 2021 → 22 4月 2021

出版系列

名字	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
國家/地區	台灣
城市	Hsinchu
期間	19/04/21 → 22/04/21

存取文件

10.1109/VLSI-TSA51926.2021.9440098

其它文件與鏈接

Link to publication in Scopus

引用此

Thoti, N., & Li, Y.-M. (2021). A novel design of ferroelectric nanowire tunnel field effect transistors. 於 VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings 文章 9440098 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA51926.2021.9440098

Thoti, Narasimhulu ; Li, Yi-Ming. / A novel design of ferroelectric nanowire tunnel field effect transistors. VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

@inproceedings{fe7356eb4f5a4a8da24b7bffbd55326f,

title = "A novel design of ferroelectric nanowire tunnel field effect transistors",

abstract = "We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec. ",

author = "Narasimhulu Thoti and Yi-Ming Li",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",

year = "2021",

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doi = "10.1109/VLSI-TSA51926.2021.9440098",

language = "English",

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Thoti, N & Li, Y-M 2021, A novel design of ferroelectric nanowire tunnel field effect transistors. 於 VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings., 9440098, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021, Hsinchu, 台灣, 19/04/21. https://doi.org/10.1109/VLSI-TSA51926.2021.9440098

A novel design of ferroelectric nanowire tunnel field effect transistors. / Thoti, Narasimhulu; Li, Yi-Ming.
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9440098 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

研究成果: Conference contribution › 同行評審

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T1 - A novel design of ferroelectric nanowire tunnel field effect transistors

AU - Thoti, Narasimhulu

AU - Li, Yi-Ming

PY - 2021/4/19

Y1 - 2021/4/19

N2 - We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec.

AB - We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec.

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U2 - 10.1109/VLSI-TSA51926.2021.9440098

DO - 10.1109/VLSI-TSA51926.2021.9440098

M3 - Conference contribution

AN - SCOPUS:85108168206

T3 - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

BT - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021

Y2 - 19 April 2021 through 22 April 2021

ER -

Thoti N, Li YM. A novel design of ferroelectric nanowire tunnel field effect transistors. 於 VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9440098. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). doi: 10.1109/VLSI-TSA51926.2021.9440098

A novel design of ferroelectric nanowire tunnel field effect transistors

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出版系列

Conference

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