@inproceedings{fe7356eb4f5a4a8da24b7bffbd55326f,
title = "A novel design of ferroelectric nanowire tunnel field effect transistors",
abstract = "We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec. ",
author = "Narasimhulu Thoti and Yi-Ming Li",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",
year = "2021",
month = apr,
day = "19",
doi = "10.1109/VLSI-TSA51926.2021.9440098",
language = "English",
series = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",
address = "United States",
}