A Novel Camel Diode Gate GaAs FET

W. Kopp, T. J. Drummond, Ta-Hui Wang, H. Morkoç, S. L. Su

研究成果: Article同行評審

摘要

A novel device utilizing the “camel diode” in place of a Schottky barrier gate has been demonstrated in GaAs grown by molecular beam epitaxy (MBE). The devices have a 7.5 μm channel length, 3 μm gate length, and a 280 gate width. The layers from which the devices are fabricated consist of a 0.15 μm GaAs layer doped to a level of 1.5 × 1017 cm-3 to form the channel, and a 100 Å p + GaAs and a 400 Å n + region to form the gate. Because of the long gate length, the electron velocity does not reach saturation, thus a transconductance of 80 mS/mm is obtained. A simple theory describing the device operation has also been developed.

原文English
頁(從 - 到)86-88
頁數3
期刊IEEE Electron Device Letters
3
發行號4
DOIs
出版狀態Published - 1 1月 1982

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