A Novel Approach of Fabricating Germanium Nanocrystals for Nonvolatile Memory Application

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, S. H. Lin, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

A nonvolatile memory device embedded with Ge nanocrystal dots is fabricated by the thermal oxidation of Si0.8Ge0.2 combined with a rapid thermal annealing at 950°C in N2 gas. The tunnel oxide in the nonvolatile memory is controlled to be 4.5 nm thick and embedded with 5.5 nm Ge nanocrystals. A low operating voltage, 5 V, is implemented and a significant threshold-voltage shift, 0.42 V, is observed. When the electrons are trapped in the Ge nanocrystals, the effect of Coulomb blockade prevents the injection and storage of more electrons and decreases the leakage current. Also, the retention characteristics are tested to be robust.

原文English
頁(從 - 到)G17-G19
期刊Electrochemical and Solid-State Letters
7
發行號1
DOIs
出版狀態Published - 2004

指紋

深入研究「A Novel Approach of Fabricating Germanium Nanocrystals for Nonvolatile Memory Application」主題。共同形成了獨特的指紋。

引用此