A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach

Jin He*, Xuemei Xi, Chung-Hsun Lin Chung-Hsun, Mansun Chan, Ali Niknejad, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference contribution同行評審

24 引文 斯高帕斯(Scopus)

摘要

A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poisson's equation to solve for electron concentration directly rather than relying on the surface potential alone. Therefore, carrier distribution in the channel away from the surface is also taken care, giving a non-charge-sheet model compatible with the classical Pao-Sah model. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFET's data.

原文English
主出版物標題2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
編輯M. Laudon, B. Romanowicz
頁面124-127
頁數4
出版狀態Published - 2 十一月 2004
事件2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
持續時間: 7 三月 200411 三月 2004

出版系列

名字2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
2

Conference

Conference2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
國家/地區United States
城市Boston, MA
期間7/03/0411/03/04

指紋

深入研究「A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach」主題。共同形成了獨特的指紋。

引用此