A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo; Xingui Zhang; Hock Chun Chin; Xiao Gong; Shao Ming Koh; Chunlei Zhan; Guang Li Luo; Chun Yen Chang; Hau Yu Lin; Chao-Hsin Chien; Zong You Han; Shih Chiang Huang; Chao Ching Cheng; Chih Hsin Ko; Clement H. Wann; Yee Chia Yeo

doi:10.1109/VTSA.2010.5488907

A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo^*
, Xingui Zhang
, Hock Chun Chin
, Xiao Gong
, Shao Ming Koh
, Chunlei Zhan
, Guang Li Luo
, Chun Yen Chang
, Hau Yu Lin
, Chao-Hsin Chien
, Zong You Han
, Shih Chiang Huang
, Chao Ching Cheng
, Chih Hsin Ko
, Clement H. Wann
, Yee Chia Yeo

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n⁺ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

原文	English
主出版物標題	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
頁面	152-153
頁數	2
DOIs	https://doi.org/10.1109/VTSA.2010.5488907
出版狀態	Published - 2010
事件	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, 台灣持續時間: 26 4月 2010 → 28 4月 2010

出版系列

名字	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
國家/地區	台灣
城市	Hsin Chu
期間	26/04/10 → 28/04/10

存取文件

10.1109/VTSA.2010.5488907

其它文件與鏈接

Link to publication in Scopus

引用此

Guo, H., Zhang, X., Chin, H. C., Gong, X., Koh, S. M., Zhan, C., Luo, G. L., Chang, C. Y., Lin, H. Y., Chien, C.-H., Han, Z. Y., Huang, S. C., Cheng, C. C., Ko, C. H., Wann, C. H., & Yeo, Y. C. (2010). A new self-aligned contact technology for III-V MOSFETs. 於 Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (頁 152-153). 文章 5488907 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488907

@inproceedings{a2d0f3af939c4b3687a908b98155e93a,

title = "A new self-aligned contact technology for III-V MOSFETs",

abstract = "We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.",

author = "Huaxin Guo and Xingui Zhang and Chin, \{Hock Chun\} and Xiao Gong and Koh, \{Shao Ming\} and Chunlei Zhan and Luo, \{Guang Li\} and Chang, \{Chun Yen\} and Lin, \{Hau Yu\} and Chao-Hsin Chien and Han, \{Zong You\} and Huang, \{Shih Chiang\} and Cheng, \{Chao Ching\} and Ko, \{Chih Hsin\} and Wann, \{Clement H.\} and Yeo, \{Yee Chia\}",

year = "2010",

doi = "10.1109/VTSA.2010.5488907",

language = "English",

isbn = "9781424450633",

series = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

pages = "152--153",

booktitle = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

note = "2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 ; Conference date: 26-04-2010 Through 28-04-2010",

}

Guo, H, Zhang, X, Chin, HC, Gong, X, Koh, SM, Zhan, C, Luo, GL, Chang, CY, Lin, HY, Chien, C-H, Han, ZY, Huang, SC, Cheng, CC, Ko, CH, Wann, CH & Yeo, YC 2010, A new self-aligned contact technology for III-V MOSFETs. 於 Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010., 5488907, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, 頁 152-153, 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, Hsin Chu, 台灣, 26/04/10. https://doi.org/10.1109/VTSA.2010.5488907

A new self-aligned contact technology for III-V MOSFETs. / Guo, Huaxin; Zhang, Xingui; Chin, Hock Chun 等.
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 152-153 5488907 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A new self-aligned contact technology for III-V MOSFETs

AU - Guo, Huaxin

AU - Zhang, Xingui

AU - Chin, Hock Chun

AU - Gong, Xiao

AU - Koh, Shao Ming

AU - Zhan, Chunlei

AU - Luo, Guang Li

AU - Chang, Chun Yen

AU - Lin, Hau Yu

AU - Chien, Chao-Hsin

AU - Han, Zong You

AU - Huang, Shih Chiang

AU - Cheng, Chao Ching

AU - Ko, Chih Hsin

AU - Wann, Clement H.

AU - Yeo, Yee Chia

PY - 2010

Y1 - 2010

N2 - We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

AB - We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

UR - https://www.scopus.com/pages/publications/77957892721

U2 - 10.1109/VTSA.2010.5488907

DO - 10.1109/VTSA.2010.5488907

M3 - Conference contribution

AN - SCOPUS:77957892721

SN - 9781424450633

T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

SP - 152

EP - 153

BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Y2 - 26 April 2010 through 28 April 2010

ER -

Guo H, Zhang X, Chin HC, Gong X, Koh SM, Zhan C 等. A new self-aligned contact technology for III-V MOSFETs. 於 Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 152-153. 5488907. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). doi: 10.1109/VTSA.2010.5488907

A new self-aligned contact technology for III-V MOSFETs

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此