TY - JOUR
T1 - A new Schmitt trigger circuit in A 0.13 μm 1/2.5 V CMOS process to receive 3.3 V input signals
AU - Chen, Shih Lun
AU - Ker, Ming-Dou
PY - 2004/9/7
Y1 - 2004/9/7
N2 - A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 V and 2.5 V, respectively. The proposed Schmitt trigger circuit is suitable for mixed-voltage I/O interfaces circuit to receive the input signals and reject the input noise.
AB - A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 V and 2.5 V, respectively. The proposed Schmitt trigger circuit is suitable for mixed-voltage I/O interfaces circuit to receive the input signals and reject the input noise.
UR - http://www.scopus.com/inward/record.url?scp=4344668695&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2004.1329336
DO - 10.1109/ISCAS.2004.1329336
M3 - Conference article
AN - SCOPUS:4344668695
SN - 0271-4310
VL - 2
JO - Proceedings - IEEE International Symposium on Circuits and Systems
JF - Proceedings - IEEE International Symposium on Circuits and Systems
T2 - 2004 IEEE International Symposium on Cirquits and Systems - Proceedings
Y2 - 23 May 2004 through 26 May 2004
ER -