A new Schmitt trigger circuit in A 0.13 μm 1/2.5 V CMOS process to receive 3.3 V input signals

Shih Lun Chen*, Ming-Dou Ker

*此作品的通信作者

    研究成果: Conference article同行評審

    7 引文 斯高帕斯(Scopus)

    摘要

    A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 V and 2.5 V, respectively. The proposed Schmitt trigger circuit is suitable for mixed-voltage I/O interfaces circuit to receive the input signals and reject the input noise.

    原文English
    頁(從 - 到)II573-II576
    期刊Proceedings - IEEE International Symposium on Circuits and Systems
    2
    DOIs
    出版狀態Published - 2004
    事件2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada
    持續時間: 23 5月 200426 5月 2004

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