A new process to improve the performance of 850 nm wavelength GaAs VCSELs

Wen Jang Jiang, Lung Chien Chen, Meng Chyi Wu, Hsin-Chieh Yu, Hung Pin Yang, Chia Pin Sung, Jim Yong Chi, Chun Yuan Huang, Yi Tsuo Wu*

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation.

原文English
頁(從 - 到)2287-2289
頁數3
期刊Solid-State Electronics
46
發行號12
DOIs
出版狀態Published - 1 12月 2002

指紋

深入研究「A new process to improve the performance of 850 nm wavelength GaAs VCSELs」主題。共同形成了獨特的指紋。

引用此