A New Photo-Sensitive Voltage-Controlled Differential Negative Resistance Device The Lambda Bipolar Photo-Transistor

Ching Yuan Wu, Chung-Yu Wu, Hong Dah Sheng

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A new photo-sensitive voltage-controlled differential negative resistance device called the LAMBDA bipolar photo-transistor is presented. The basic structure of the Lambda bipolar photo-transistor consists of the simultaneous integration of a bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. The I-V characteristic of this new device will exhibit a voltage-controlled differential negative resistance when the device is exposed to light. The operational principle of this new device will be described and the characteristics of the fabricated device are discussed.

原文English
頁(從 - 到)81-82
頁數2
期刊IEEE Electron Device Letters
1
發行號5
DOIs
出版狀態Published - 1 1月 1980

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