A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

Yi-Ming Li*, Jinn Liang Liu, Tien-Sheng Chao, S. M. Sze

*此作品的通信作者

研究成果: Conference article同行評審

28 引文 斯高帕斯(Scopus)

摘要

Based on adaptive finite volume approximation, a posteriori error estimation, and monotone iteration, a novel system is proposed for parallel simulations of semiconductor devices. The system has two distinct parallel algorithms to perform a complete set of I-V simulations for any specific device model. The first algorithm is a domain decomposition on 1-irregular unstructured meshes whereas the second is a parallelization of multiple I-V points. Implemented on a Linux cluster using message passing interface libraries, both algorithms are shown to have excellent balances on dynamic loading and hence result in efficient speedup. Compared with measurement data, computational results of sub-micron MOSFET devices are given to demonstrate the accuracy and efficiency of the system.

原文English
頁(從 - 到)285-289
頁數5
期刊Computer Physics Communications
142
發行號1-3
DOIs
出版狀態Published - 15 12月 2001
事件Conference on Computational Physics (CCP'2000) - Gold Coast, Qld., Australia
持續時間: 3 12月 20008 12月 2000

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