A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices

Steve S. Chung*, Y. R. Liu, C. F. Yeh, S. R. Wu, C. S. Lai, T. Y. Chang, J. H. Ho, C. Y. Liu, C. T. Huang, C. T. Tsai, W. T. Shiau, S. W. Sun

*此作品的通信作者

    研究成果: Conference article同行評審

    24 引文 斯高帕斯(Scopus)

    摘要

    In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.

    原文English
    文章編號1469222
    頁(從 - 到)86-87
    頁數2
    期刊Digest of Technical Papers - Symposium on VLSI Technology
    2005
    DOIs
    出版狀態Published - 2005
    事件2005 Symposium on VLSI Technology - Kyoto, Japan
    持續時間: 14 6月 200514 6月 2005

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