A New methodology for probing the electrical properties of heavily phosphorous-doped polycrystalline silicon nanowires

Horng-Chih Lin*, Zer Ming Lin, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article同行評審

摘要

In this study, we proposed a new methodology for probing the electrical properties of heavily doped polycrystalline silicon (poly-Si) nanowires (NWs), including active doping concentration, mobility, and interface fixed charge density. Implementation of this procedure is based on the modulation of the device operation of a gate-all-around (GAA) junctionless (J-less) transistor from the gated resistor mode to the ungated one. The extracted carrier concentration in the NW is found to be much lower than that of Hall measurements, while a negative fixed charge density is identified with the procedure. Dopant segregation at the oxide interface is postulated to be closely related to these observations.

原文English
文章編號04CC18
期刊Japanese journal of applied physics
52
發行號4 PART 2
DOIs
出版狀態Published - 1 4月 2013

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