A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling

Jyh-Chyurn Guo*, Yi Min Lin

*此作品的通信作者

    研究成果: Article同行評審

    31 引文 斯高帕斯(Scopus)

    摘要

    A new equivalent circuit method is proposed in this paper to de-embed the lossy substrate and lossy pads' parasitics from the measured RF noise of multifinger MOSFETs with aggressive gate length scaling down to 80 nm. A new RLC network model is subsequently developed to simulate the lossy substrate and lossy pad effect. Good agreement has been realized between the measurement and simulation in terms of S-parameters and four noise parameters, NFmin (minimum noise figure), Rn (noise resistance), Re(Ysopt Im(Ysopt) for the sub-100-nm RF nMOS devices. The intrinsic NFmin extracted by the new de-embedding method reveal that NFmin at 10 GHz can be suppressed to below 0.8 dB for the 80-nm nMOS attribut ed to the advancement of fT to 100-GHz level and the effectively reduced gate resistance by multifinger structure.

    原文English
    頁(從 - 到)339-347
    頁數9
    期刊IEEE Transactions on Electron Devices
    53
    發行號2
    DOIs
    出版狀態Published - 1 2月 2006

    指紋

    深入研究「A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling」主題。共同形成了獨特的指紋。

    引用此