A New Dynamic Random Access Memory Cell Using a Bipolar MOS Composite Structure

Chung-Yu Wu*

*此作品的通信作者

    研究成果: Article同行評審

    摘要

    A new dynamic random access memory (RAM) cell which incoperates an n-p-n bipolar junction transistor with an n-channel MOSFET in a composite structure, is proposed and investigated. In this novel cell called the BIMOS cell, the collector-base junction serves as a buried storage capacitor whereas the n-MOSFET as a transfer gate. The fabrication technology is simple and compatible with that of single-polysilicon CMOS IC's and a minimum cell size of 14.875F2 with a minimum feature size F is realizable. The write, read, and stand by operations of the cell are analyzed and simulated. An experimental cell is fabricated and characterized. Dynamic test is successfully performed. The investigation on the cell performance is also made. It has shown that large storage capacitance to bit-line capacitance ratio as well as fairly good packing density, soft-error immunity and leakage characteristics are expected. Furthermore, as compared to the conventional 1-transistor cell the new cell can be scaled down with less processing troubles and better performance improvements. Simple process and good scaled-down properties offer great potential for the proposed new cell to be used in the design of larger dynamic MOS RAM's.

    原文American English
    頁(從 - 到)886-894
    頁數9
    期刊IEEE Transactions on Electron Devices
    30
    發行號8
    DOIs
    出版狀態Published - 8月 1983

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