A New Cascode Design with Enhanced Power gain and Bandwidth for Application in mm-Wave Amplifier

Jinq Min Lin, Adhi Cahyo Wijaya, Jyh Chyurn Guo

研究成果: Conference contribution同行評審

摘要

In this paper, a new cascode, namely dual-gate (DG) MOSFET is designed and fabricated in 40nm CMOS technology to realize smaller area, reduced parasitic RC, and most importantly enhanced power gain up to 140GHz and ultra-wide bandwidth compared to the conventional cascode, aimed at D-band (110~170 GHz) amplifiers design.

原文English
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665409230
DOIs
出版狀態Published - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
持續時間: 18 4月 202221 4月 2022

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區Taiwan
城市Hsinchu
期間18/04/2221/04/22

指紋

深入研究「A New Cascode Design with Enhanced Power gain and Bandwidth for Application in mm-Wave Amplifier」主題。共同形成了獨特的指紋。

引用此