@inproceedings{d9e93ed74ff44b41b8bba34a60954f66,
title = "A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs",
abstract = "A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.",
keywords = "nanofin, nanosheet, work function fluctuation",
author = "Sung, {Wen Li} and Yiming Li",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",
year = "2022",
doi = "10.1109/VLSI-TSA54299.2022.9770984",
language = "English",
series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",
address = "美國",
}