A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

Wen Li Sung, Yiming Li*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.

原文English
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665409230
DOIs
出版狀態Published - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
持續時間: 18 4月 202221 4月 2022

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區Taiwan
城市Hsinchu
期間18/04/2221/04/22

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