A multi-gate MOSFET compact model featuring independent-gate operation

Keyphrases

• Compact Model 100%
• Independent Gate 100%
• Multiple-Gate MOSFETs (MuGFETs) 100%
• Gate Operation 100%
• SRAM Cell 50%
• Device Effects 50%
• Real Device 50%
• Short Channel Effects 50%
• TCAD Simulation 50%
• Back Gate 50%
• TFET SRAMs 50%
• Doping Effect 50%
• Simulation Example 50%
• Device Variations 50%
• Back-gate Biasing 50%
• Body Doping 50%
• Dynamic Feedback 50%
• Independently Biased 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Simulation Example 50%
• Fitting Parameter 50%
• Core Model 50%