A multi-gate MOSFET compact model featuring independent-gate operation

Darsen D. Lu; Mohan V. Dunga; Chung Hsun Lin; Ali M. Niknejad; Chen-Ming Hu

doi:10.1109/IEDM.2007.4419001

A multi-gate MOSFET compact model featuring independent-gate operation

Darsen D. Lu, Mohan V. Dunga, Chung Hsun Lin, Ali M. Niknejad, Chen-Ming Hu

國際半導體產業學院

研究成果: Conference article › 同行評審

30 引文斯高帕斯（Scopus）

摘要

A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.

原文	English
文章編號	4419001
頁（從 - 到）	565-568
頁數	4
期刊	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419001
出版狀態	Published - 2007
事件	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, 美國持續時間: 10 12月 2007 → 12 12月 2007

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10.1109/IEDM.2007.4419001

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author = "Lu, {Darsen D.} and Dunga, {Mohan V.} and Lin, {Chung Hsun} and Niknejad, {Ali M.} and Chen-Ming Hu",

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AU - Hu, Chen-Ming

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AB - A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.

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M3 - Conference article

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Y2 - 10 December 2007 through 12 December 2007

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A multi-gate MOSFET compact model featuring independent-gate operation

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