摘要
A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.
原文 | English |
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文章編號 | 7089437 |
頁(從 - 到) | 91-96 |
頁數 | 6 |
期刊 | PESC Record - IEEE Annual Power Electronics Specialists Conference |
卷 | 1980-January |
DOIs | |
出版狀態 | Published - 1 1月 1980 |
事件 | 11th Annual IEEE Power Electronics Specialists Conference, PESC 1980 - Atlanta, United States 持續時間: 16 6月 1980 → 20 6月 1980 |